Translation. Region: Russian Federation –
Source: Novosibirsk State University –
An important disclaimer is at the bottom of this article.
At the first conference-seminar "Physical Problems of X-ray Lithography Technology" at Novosibirsk State University, scientists presented a design vision for the development of a domestically produced experimental X-ray lithograph, the "Orel-7." This unique, world-class facility is proposed as an infrastructure element for the Siberian Ring Photon Source (SKIF) Shared Use Center and will be used to overcome fundamental technological limitations in advanced microelectronics.
The project is being developed by a group of scientists NSU Center for Artificial Intelligence, the Institute of Semiconductor Physics SB RAS, and the Institute of Computational Mathematics and Mathematical Geophysics SB RAS. It envisions the creation of a specialized X-ray station based on the SKIF, a high-intensity synchrotron radiation source necessary for the operation of new types of lithographic equipment.
Lithography is a key technology in microchip production: it determines the topology and dimensions of features on semiconductor wafers. Current solutions are based on the use of radiation with a wavelength of 13.5 nanometers (EUV lithography). However, further improvements in resolution are possible either through fundamentally new approaches or by moving to shorter wavelengths, including X-rays.
X-ray lithography enables the formation of ultra-miniature structures by using X-rays at wavelengths ranging from 1 to 100 angstroms. Its main advantage is the ability to create patterns without having to overcome the diffraction limit, allowing for higher resolution while maintaining productivity. Furthermore, the technology can be significantly less expensive than complex 13.5 nm EUV lithography operations, which produce structures with a period of 7 nm due to an extreme increase in radiation brightness (power) and multiple spacer operations. Instead of a single "exposure" and resist removal operation, up to four sequential resist and spacer depositions are used in each cycle (SAQP).
The development of microelectronics in the coming years is linked to the transition to angstrom technologies, where components are created almost at the atomic level. According to conference participants, breakthrough solutions and the combined efforts of research centers are necessary for this qualitative leap.
"We see that Russia is currently lagging behind global leaders in microelectronics. To overcome this gap, we need projects based on fundamentally new ideas. Such problems cannot be solved by a single institute; they require broad cooperation. Forming such a consortium was precisely what was discussed at the conference," noted Alexander Lyulko, Director of the NSU Center for Artificial Intelligence.
According to him, the NSU AI Center's expertise in creating digital twins of industrial equipment could accelerate the development of the lithograph. At the same time, the project participants intend to leverage the scientific potential of SB RAS institutes in semiconductor physics and mathematical modeling.
The project's implementation is expected to enable the domestic industry to surpass the 28-nanometer technological limit and make significant progress toward developing a sovereign technology for the production of mass-produced, top-tier Russian processors.
"This collaborative work should lead to the creation of equipment that will enable Russian microelectronics to advance far beyond the 28-nanometer limit. This is a critical milestone for the third transition in microelectronics (the first transition is from visible to deep ultraviolet radiation, and the second is to extreme ultraviolet radiation)," emphasized Dmitry Shcheglov, one of the project's authors, a researcher at the NSU Center for Artificial Intelligence and the head of a laboratory at the Institute of Semiconductor Physics SB RAS.
It is expected that a prototype lithograph will be built at SKIF, where it will be possible to study the physics of the processes in detail and refine the process parameters. Similar equipment is planned to be deployed simultaneously at the synchrotron in Zelenograd for industrial testing purposes.
The project is still in its early stages. Following the conference, participants developed a scientific and technical vision for the feasibility of creating the station, identified key challenges and technological barriers, and outlined the foundations of a future consortium. The project has already attracted interest not only from research centers in Moscow, Novosibirsk, and other cities across the country, but also from the Minsk Microelectronics Center.
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