Translation. Region: Russian Federation –
Source: Peter the Great St. Petersburg Polytechnic University –
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SPbPU scientists have developed a method for assessing the radiation resistance of gallium oxide based on fractal analysis of collision cascades during irradiation with accelerated ions. This will allow them to predict the failure of electronics under radiation conditions. The Scientific Council of the Physical Sciences Division of the Russian Academy of Sciences recognized the Polytechnic University's research as the most important achievement of 2025 in the field of solid-state radiation physics.
A research team, including professors Platon Karasev and Andrey Titov of the Institute of Electronics and Telecommunications' Higher School of Engineering Physics, and Anton Klevtsov and Elizaveta Fedorenko, assistant professors of the Institute of Physics and Mathematics' Department of Physics, applied two previously unrelated approaches to analyzing damage formation in gallium oxide electronic components. As a result, the researchers demonstrated the ability to predict the rate of defect accumulation, which will enable optimization of the manufacturing technology for diodes, transistors, and other components based on this material.
What is the significance of this discovery? Firstly, the production of semiconductor electronic devices requires the addition of atoms of special impurities in specific areas. This alters the properties of these regions of the material, resulting in diodes, transistors, and other components. One of the most precise technological methods for this addition is the acceleration of ions and their bombardment of the semiconductor (ion implantation). However, this has an undesirable side effect: structural damage. The new method developed by Polytechnic University scientists will allow for more precise calculations of irradiation during the production of semiconductors for electronic devices, minimizing the negative consequences.
Secondly, gallium oxide's high radiation resistance makes it a promising semiconductor for next-generation electronics—from onboard spacecraft to control systems at nuclear power plants. The electronic devices needed to manage electrical power are constantly exposed to radiation, and the method proposed by the Polytechnic Institute researchers will help predict the likelihood of their failure and prevent accidents.
Results of the Polytechnics' study St. Petersburg Governor Alexander Beglov notedAccording to the mayor, this discovery makes a significant contribution to fulfilling the Russian President's instructions on developing domestic microelectronics and confirms the high potential of the St. Petersburg scientific school.
The recognition of the RAS academicians and the governor's high praise for the achievements of the SPbPU scientific school in micro- and nanoelectronics technologies demonstrate that the university's scientists are working at the forefront of modern science, in close contact with enterprises, conducting research commissioned by them and ensuring Russia's sovereignty in this field.
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